Electron-beam-induced growth of silicon multibranched nanostructures -: art. no. 113111

被引:11
|
作者
Fonseca, LF [1 ]
Resto, O [1 ]
Solá, F [1 ]
机构
[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
基金
美国国家航空航天局;
关键词
D O I
10.1063/1.2045564
中图分类号
O59 [应用物理学];
学科分类号
摘要
Although successful nanobranching has been demonstrated for some materials using a variety of methods, the controlled fabrication of multibranched nanostructures of silicon is an important challenge faced by nanotechnologist; because it is crucial for the assembly of electronic interconnects at the atomic scale. Here, we report an electron-beam-induced approach that enables to grow silicon nanobranched structures at specific locations and to control the growth process at the nanoscale level. We further present a detailed in situ imaging of the growth dynamics and explain the results by a qualitative model based on local heating and charge concentration processes.
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页数:3
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