Photoconductive Switch With High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond

被引：33

作者：

Hall, David L. ^{[1
]}

Voss, Lars F. ^{[1
]}

Grivickas, Paulius ^{[1
]}

Bora, Mihail ^{[1
]}

Conway, Adam M. ^{[1
]}

Scajev, Patrik ^{[2
]}

Grivickas, Vytautas ^{[2
]}

机构：

[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

[2] Vilnius Univ, Inst Photon & Nanotechnol, LT-10257 Vilnius, Lithuania

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 07期

关键词：

Diamond; Nitrogen; Absorption; Photoconductivity; Optical switches; Optical reflection; Measurement by laser beam; Optoelectronic devices; photoconductivity; wide band gap semiconductors; SINGLE-CRYSTAL; RECOMBINATION; MOBILITY;

D O I：

10.1109/LED.2020.2999821

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To mymargin evaluate nitrogen-doped diamond as a candidate for Photoconductive Semiconductor Switches (PCSS) triggered in the sub-bandgap visible range, we have fabricated and tested diamond PCSS from a set of diamond grades of varying nitrogen concentration. The nitrogen-doped diamond PCSS have higher responsivity than other diamond optoelectronic devices in the visible range. We present a novel demonstration of sub-bandgap triggered diamond PCSS, which when scaled to higher voltage, can compete with and even surpass performance of existing ultraviolet-triggered diamond PCSS. This work suggests that nitrogen-doped diamond is a promising candidate for high-power, fast optoelectronic devices.

引用

页码：1070 / 1073

页数：4

共 34 条

[11] Lateral scan profiles of the recombination parameters correlated with distribution of grown-in impurities in HPHT diamond [J].

Gaubas, E. ;

Ceponis, T. ;

Jasiunas, A. ;

Kalendra, V. ;

Pavlov, J. ;

Kazuchits, N. ;

Naumchik, E. ;

Rusetsky, M. .

[12] A DIAMOND OPTO-ELECTRONIC SWITCH [J].

HO, PT ;

LEE, CH ;

STEPHENSON, JC ;

CAVANAGH, RR .

OPTICS COMMUNICATIONS, 1983, 46 (3-4) :202-204

[13] High power subterahertz electromagnetic wave radiation from GaN photoconductive switch [J].

Imafuji, Osamu ;

Singh, Brahm Pal ;

Hirose, Yutaka ;

Fukushima, Yasuyuki ;

Takigawa, Shinichi .

APPLIED PHYSICS LETTERS, 2007, 91 (07)

[14] High carrier mobility in single-crystal plasma-deposited diamond [J].

Isberg, J ;

Hammersberg, J ;

Johansson, E ;

Wikström, T ;

Twitchen, DJ ;

Whitehead, AJ ;

Coe, SE ;

Scarsbrook, GA .

SCIENCE, 2002, 297 (5587) :1670-1672

[15] Design and Evaluation of a Compact Silicon Carbide Photoconductive Semiconductor Switch [J].

James, Colt ;

Hettler, Cameron ;

Dickens, James .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (02) :508-511

[16] EXTRINSIC PHOTOCONDUCTIVITY IN CHEMICAL VAPOR-DEPOSITION DIAMOND [J].

JENG, DG ;

TUAN, HS ;

SALAT, RF ;

FRICANO, GJ .

APPLIED PHYSICS LETTERS, 1991, 58 (12) :1271-1273

[17] SOFT-X-RAY DETECTION WITH DIAMOND PHOTOCONDUCTIVE DETECTORS [J].

KANIA, DR ;

PAN, L ;

KORNBLUM, H ;

BELL, P ;

LANDEN, ON ;

PIANETTA, P .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1990, 61 (10) :2765-2767

[18] Metal-diamond semiconductor interface and photodiode application [J].

Koide, Yasuo .

APPLIED SURFACE SCIENCE, 2008, 254 (19) :6268-6272

[19] Visible and near-infrared photodetector on chemically vapor deposited diamond [J].

Kukushkin, V. A. ;

Lobaev, M. A. ;

Bogdanov, S. A. ;

Stepanov, A. N. ;

Kraev, S. A. ;

Okhapkin, A., I ;

Arkhipova, E. A. ;

Zdoroveyshchev, A., V ;

Ved, M. V. .

DIAMOND AND RELATED MATERIALS, 2019, 97

[20] High voltage, bulk GaN-based photoconductive switches for pulsed power applications [J].

Leach, J. H. ;

Metzger, R. ;

Preble, E. A. ;

Evans, K. R. .

GALLIUM NITRIDE MATERIALS AND DEVICES VIII, 2013, 8625

← 1 2 3 4 →