Photoconductive Switch With High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond

被引：33

作者：

Hall, David L. ^{[1
]}

Voss, Lars F. ^{[1
]}

Grivickas, Paulius ^{[1
]}

Bora, Mihail ^{[1
]}

Conway, Adam M. ^{[1
]}

Scajev, Patrik ^{[2
]}

Grivickas, Vytautas ^{[2
]}

机构：

[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

[2] Vilnius Univ, Inst Photon & Nanotechnol, LT-10257 Vilnius, Lithuania

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 07期

关键词：

Diamond; Nitrogen; Absorption; Photoconductivity; Optical switches; Optical reflection; Measurement by laser beam; Optoelectronic devices; photoconductivity; wide band gap semiconductors; SINGLE-CRYSTAL; RECOMBINATION; MOBILITY;

D O I：

10.1109/LED.2020.2999821

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To mymargin evaluate nitrogen-doped diamond as a candidate for Photoconductive Semiconductor Switches (PCSS) triggered in the sub-bandgap visible range, we have fabricated and tested diamond PCSS from a set of diamond grades of varying nitrogen concentration. The nitrogen-doped diamond PCSS have higher responsivity than other diamond optoelectronic devices in the visible range. We present a novel demonstration of sub-bandgap triggered diamond PCSS, which when scaled to higher voltage, can compete with and even surpass performance of existing ultraviolet-triggered diamond PCSS. This work suggests that nitrogen-doped diamond is a promising candidate for high-power, fast optoelectronic devices.

引用

页码：1070 / 1073

页数：4

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