Gain recovery in a quantum dot semiconductor optical amplifier and corresponding pattern effects in amplified optical signals at 1.5 μm

被引：8

作者：

Park, J. ^{[1
]}

Jang, Y. D. ^{[1
]}

Baek, J. S. ^{[1
]}

Kim, N. J. ^{[1
]}

Yee, K. J. ^{[1
]}

Lee, H. ^{[1
]}

Lee, D. ^{[1
]}

Pyun, S. H. ^{[2
]}

Jeong, W. G. ^{[2
]}

Kim, J. ^{[3
]}

机构：

[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[2] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea

[3] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

来源：

OPTICS EXPRESS | 2012年 / 20卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

DYNAMICS; DEVICES; LASERS;

D O I：

10.1364/OE.20.006215

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Fast gain recovery observed in quantum-dot semiconductor-optical-amplifiers (QDSOAs) is useful for amplifying high-speed optical signals. The small but finite slow recovery component can deteriorate the signal amplification due to the accumulation of gain saturation during 10 Gb/s operation. A study of the gain recoveries and pattern effects in signals amplified using a 1.5 mu m InAs/InGaAsP QDSOA reveals that the gain recovery is always fast, and pattern-effect-free amplification is observed at the ground state. However, at the excited state, the slow component increases with the current, and significant pattern effects are observed. Simulations of the pattern effects agreed with the observed experimental trends. (C) 2012 Optical Society of America

引用

页码：6215 / 6224

页数：10

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