Low temperature growth of graphene film by microwave assisted surface wave plasma CVD for transparent electrode application

被引：77

作者：

Kalita, Golap ^{[1
]}

Wakita, Koichi ^{[1
]}

Umeno, Masayoshi ^{[1
]}

机构：

[1] Chubu Univ, Dept Elect & Informat Engn, Kasugai, Aichi 4878501, Japan

来源：

RSC ADVANCES | 2012年 / 2卷 / 07期

关键词：

LARGE-AREA; OXIDE; ANODES; ROUTE;

D O I：

10.1039/c2ra00648k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Here, we report the synthesis of a graphene film on Cu foil by microwave assisted surface wave plasma chemical vapor deposition (MW-SWP-CVD) at a low pressure and temperature using a hydrocarbon gas. Raman spectroscopy and transmission electron microscopy (TEM) studies clearly show deposited carbon films that consist of few layer graphene sheets. Deposition of graphene films with a few layers structure was achieved at a temperature as low as 240 degrees C. In the nucleation and growth process, carbon radicals are formed with hydrogen termination in the surface wave plasma, which absorb continuously on the Cu surface to form sp(2) carbon and eventually a graphene structure. The transparency and conductivity characteristics of the transferred graphene films show suitability for flexible electronics applications.

引用

页码：2815 / 2820

页数：6

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