Properties of a-Si:N:H films beneficial for silicon solar cells applications

被引：7
作者：
Swatowska, B. [1 ]
Stapinski, T. [1 ]
Zimowski, S. [2 ]
机构：
[1] AGH Univ Sci & Technol, Dept Elect, PL-30059 Krakow, Poland
[2] AGH Univ Sci & Technol, Dept Machine Design & Terotechnol, PL-30059 Krakow, Poland
来源：
OPTO-ELECTRONICS REVIEW | 2012年 / 20卷 / 02期
关键词：
PECVD; amorphous Si:N:H; protective properties; antireflective coatings ARC; CHEMICAL-VAPOR-DEPOSITION; AMORPHOUS-SILICON; NITRIDE FILMS;
D O I：
10.2478/s11772-012-0025-y
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Amorphous silicon-nitride thin films a-Si:N:H were obtained by plasma enhanced chemical vapour deposition (PECVD) method from SiH4 + NH3 at 13.56 MHz. The process parameters were chosen to obtain the films of properties suitable for optoelectronic and mechanical applications. FTIR analysis of a-Si: N: H films indicated the presence of numerous hydrogen bonds (Si-H and N-H) which passivate structural defects in multicrystalline silicon and react with impurities. The morphological investigations show that the films are homogeneous. The deposition of a-Si: N: H layers leads to the decrease in friction coefficient of used substrates. Optical properties were optimised to obtain the films of low effective reflectivity, large energy gap E-g from 2.4 to 2.9 eV and refractive index in the range of 1.9 to 2.2. Reduction of friction coefficient for monocrystalline silicon after covering with a-Si: N: H films was observed: from 0.25 to 0.18 for 500 cycles.
引用
收藏
页码：168 / 173
页数：6
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