Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

被引：66

作者：

Kuboyama, Satoshi ^{[1
]}

Maru, Akifumi ^{[1
]}

Shindou, Hiroyuki ^{[1
]}

Ikeda, Naomi ^{[1
]}

Hirao, Toshio ^{[2
]}

Abe, Hiroshi ^{[2
]}

Tamura, Takashi ^{[1
]}

机构：

[1] Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan

[2] Japan Atom Energy Agcy, Takasaki, Gunma 3701292, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期

关键词：

AlGaN/GaN HEMTs; heavy ions; radiation damage; single-event effects; PROTON;

D O I：

10.1109/TNS.2011.2171504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It was demonstrated that several kinds of permanent damage were introduced by heavy ions in AlGaN/GaN HEMTs similar to SiC devices. A new mode of damage attributable to the transistor structure was also identified in addition to the damage observed similarly in SiC devices.

引用

页码：2734 / 2738

页数：5

共 50 条

[41] Irradiation Hardened p-GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV•cm2/mg and 95% Conversion Efficiency at 300 W/500 kHz
Zhou, Feng
Zou, Can
Zhou, Tianyang
Xu, Weizong
Ren, Fangfang
Zhou, Dong
Wang, Yiwang
Chen, Dunjun
Xia, Yuanyang
Wu, Leke
Li, Yiheng
Zhu, Tinggang
Zheng, Youdou
Zhang, Rong
Lu, Hai
IEEE ELECTRON DEVICE LETTERS, 2024, 45 (06) : 976 - 979
[42] Single-Event Transient Measurements on a DC/DC Pulse Width Modulator Using Heavy Ion, Proton, and Pulsed Laser
Y. Ren
A.-L. He
S.-T. Shi
G. Guo
L. Chen
S.-J. Wen
R. Wong
N. W. van Vonno
B. L. Bhuva
Journal of Electronic Testing, 2014, 30 : 149 - 154
[43] Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes
Sengupta, Arijit
Ball, Dennis R.
Witulski, Arthur F.
Zhang, En Xia
Schrimpf, Ronald D.
Galloway, Kenneth F.
Reed, Robert A.
Alles, Michael L.
McCurdy, Michael W.
Sternberg, Andrew L.
Johnson III, Robert A.
Howell, Mick E.
Osheroff, Jason M.
Hutson, John M.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023, 70 (04) : 394 - 400
[44] Single-Event Transient Measurements on a DC/DC Pulse Width Modulator Using Heavy Ion, Proton, and Pulsed Laser
Ren, Y.
He, A-L
Shi, S-T
Guo, G.
Chen, L.
Wen, S-J
Wong, R.
van Vonno, N. W.
Bhuva, B. L.
JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, 2014, 30 (01): : 149 - 154
[45] TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs
Zhang, Ga
Zhao, Shenglei
Wang, Zhizhe
Song, Xiufeng
Liu, Shuang
Sun, Xuejing
Yu, Longyang
You, Shuzhen
Liu, Zhihong
Hao, Yue
Zhang, Jincheng
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (07) : 4119 - 4124
[46] Heavy Ion Induced Single-Event Latchup Screening of Integrated Circuits Using Commercial Off-the-Shelf Evaluation Boards
Allen, Gregory R.
Irom, Farokh
Scheick, Leif
Vartanian, Sergeh
O'Connor, Michael
2016 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), 2016, : 63 - 69
[47] Analysis of Angular Dependence of Single-Event Latchup Sensitivity for Heavy-Ion Irradiations of 0.18-μm CMOS Technology
Artola, L.
Roche, N. J. -H.
Hubert, G.
Al Youssef, A.
Khachatrian, A.
McMarr, P.
Hughes, H.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) : 2539 - 2546
[48] Single event sensitivity and de-rating of SiC power devices to heavy ions and protons
Steffens, Michael
Hoeffgen, Stefan K.
Kundgen, Tobias
Paschkowski, Eike
Poizat, Marc
Wolk, Dorothea
2019 19TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2022, : 357 - 361
[49] A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal
Kanyogoro, Nderitu
Buchner, Stephen
McMorrow, Dale
Hughes, Harold
Liu, Michael S.
Hurst, Al
Carpasso, Charles
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (06) : 3414 - 3418
[50] Analysis of Single-Event Effects in a Radiation-Hardened Low-Jitter PLL Under Heavy Ion and Pulsed Laser Irradiation
Chen, Zhuojun
Lin, Min
Ding, Ding
Zheng, Yunlong
Sang, Zehua
Zou, Shichang
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 106 - 112

← 1 2 3 4 5 →