Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

被引：66
|
作者：
Kuboyama, Satoshi [1 ]
Maru, Akifumi [1 ]
Shindou, Hiroyuki [1 ]
Ikeda, Naomi [1 ]
Hirao, Toshio [2 ]
Abe, Hiroshi [2 ]
Tamura, Takashi [1 ]
机构：
[1] Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan
[2] Japan Atom Energy Agcy, Takasaki, Gunma 3701292, Japan
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期
关键词：
AlGaN/GaN HEMTs; heavy ions; radiation damage; single-event effects; PROTON;
D O I：
10.1109/TNS.2011.2171504
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It was demonstrated that several kinds of permanent damage were introduced by heavy ions in AlGaN/GaN HEMTs similar to SiC devices. A new mode of damage attributable to the transistor structure was also identified in addition to the damage observed similarly in SiC devices.
引用
收藏
页码：2734 / 2738
页数：5
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