Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

被引：73

作者：

Kuboyama, Satoshi ^{[1
]}

Maru, Akifumi ^{[1
]}

Shindou, Hiroyuki ^{[1
]}

Ikeda, Naomi ^{[1
]}

Hirao, Toshio ^{[2
]}

Abe, Hiroshi ^{[2
]}

Tamura, Takashi ^{[1
]}

机构：

[1] Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan

[2] Japan Atom Energy Agcy, Takasaki, Gunma 3701292, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期

关键词：

AlGaN/GaN HEMTs; heavy ions; radiation damage; single-event effects; PROTON;

D O I：

10.1109/TNS.2011.2171504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It was demonstrated that several kinds of permanent damage were introduced by heavy ions in AlGaN/GaN HEMTs similar to SiC devices. A new mode of damage attributable to the transistor structure was also identified in addition to the damage observed similarly in SiC devices.

引用

页码：2734 / 2738

页数：5

共 11 条

[1]

Bazzoli S., RAD ITS EFFECTS COMP

[2]

Joh J., 2006, IEDM, P415, DOI DOI 10.1109/IEDM.2006.346799

[3] MECHANISM FOR SINGLE-EVENT BURNOUT OF POWER MOSFETS AND ITS CHARACTERIZATION TECHNIQUE [J].

KUBOYAMA, S ;

MATSUDA, S ;

KANNO, T ;

ISHII, T .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) :1698-1703

[4] Anomalous charge collection in Silicon Carbide Schottky Barrier Diodes and resulting permanent damage and single-event burnout [J].

Kuboyama, Satoshi ;

Kamezawa, Chihiro ;

Ikeda, Naomi ;

Hirao, Toshio ;

Ohyama, Hidenori .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) :3343-3348

[5] Continuum based modeling of silicon integrated circuit processing: An object oriented approach [J].

Law, ME ;

Cea, SM .

COMPUTATIONAL MATERIALS SCIENCE, 1998, 12 (04) :289-308

[6] Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors [J].

Luo, B ;

Kim, J ;

Ren, F ;

Gillespie, JK ;

Fitch, RC ;

Sewell, J ;

Dettmer, R ;

Via, GD ;

Crespo, A ;

Jenkins, TJ ;

Gila, BP ;

Onstine, AH ;

Allums, KK ;

Abernathy, CR ;

Pearton, SJ ;

Dwivedi, R ;

Fogarty, TN ;

Wilkins, R .

APPLIED PHYSICS LETTERS, 2003, 82 (09) :1428-1430

[7] The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs [J].

Moran, Jeffrey T. ;

McClory, John W. ;

Petrosky, James C. ;

Farlow, Gary C. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (06) :3223-3228

[8] Process Dependence of Proton-Induced Degradation in GaN HEMTs [J].

Roy, Tania ;

Zhang, En Xia ;

Puzyrev, Yevgeniy S. ;

Fleetwood, Daniel M. ;

Schrimpf, Ronald D. ;

Choi, Bo K. ;

Hmelo, Anthony B. ;

Pantelides, Sokrates T. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (06) :3060-3065

[9] Displacement damage-induced catastrophic second breakdown in silicon carbide Schottky power diodes [J].

Scheick, L ;

Selva, L ;

Becker, H .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) :3193-3200

[10] AlGaN/AlN/GaN high-power microwave HEMT [J].

Shen, L ;

Heikman, S ;

Moran, B ;

Coffie, R ;

Zhang, NQ ;

Buttari, D ;

Smorchkova, IP ;

Keller, S ;

DenBaars, SP ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (10) :457-459

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