Impact of a RbF Postdeposition Treatment on the Electronic Structure of the CdS/Cu(In,Ga)Se2 Heterojunction in High-Efficiency Thin-Film Solar Cells

被引:81
|
作者
Hauschild, D. [1 ,2 ,3 ]
Kreikemeyer-Lorenzo, D. [1 ]
Jackson, P. [4 ]
Friedlmeier, T. Magorian [4 ]
Hariskos, D. [4 ]
Reiner, F. [3 ]
Powalla, M. [4 ]
Heske, C. [1 ,2 ,5 ]
Weinhardt, L. [1 ,2 ,5 ]
机构
[1] Karlsruhe Inst Technol, Inst Photon Sci & Synchrotron Radiat IPS, Hermann v Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany
[2] Karlsruhe Inst Technol, Inst Chem Technol & Polymer Chem ITCP, Engesserstr 18-20, D-76128 Karlsruhe, Germany
[3] Univ Wurzburg, Expt Phys 7, D-97074 Wurzburg, Germany
[4] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, Meitnerstr 1, D-70563 Stuttgart, Germany
[5] Univ Nevada, Dept Chem & Biochem, 4505 Maryland Pkwy, Las Vegas, NV 89154 USA
来源
ACS ENERGY LETTERS | 2017年 / 2卷 / 10期
关键词
BAND ALIGNMENT; CD2+/NH3 TREATMENT; SURFACE; PERFORMANCE; INTERFACE; MODULES;
D O I
10.1021/acsenergylett.7b00720
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Recently, a world-record efficiency of 22.6% was achieved by applying a RbF postdeposition treatment (PDT) on a Cu(In,Ga)Se-2 (CIGSe) thin-film solar cell absorber surface. Here, we study the impact of this RbF-PDT on the electronic structure of the CIGSe surface and the CdS/CIGSe interface using ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS), as well as inverse photoemission spectroscopy (IPES). After RbF-PDT, we find a small downward shift of the band edges, while the surface band gap value itself is not affected. In addition, a further downward band bending in the CIGSe absorber is observed upon formation of the RbF-PDT CdS/CIGSe interface. We derive a flat conduction band alignment between the RbF-PDT CIGSe absorber and the CdS buffer, commensurate with the high efficiencies of solar cell devices prepared with RbF-PDT.
引用
收藏
页码:2383 / 2387
页数:5
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