Impact of a RbF Postdeposition Treatment on the Electronic Structure of the CdS/Cu(In,Ga)Se2 Heterojunction in High-Efficiency Thin-Film Solar Cells

被引：86

作者：

Hauschild, D. ^{[1
,2
,3
]}

Kreikemeyer-Lorenzo, D. ^{[1
]}

Jackson, P. ^{[4
]}

Friedlmeier, T. Magorian ^{[4
]}

Hariskos, D. ^{[4
]}

Reiner, F. ^{[3
]}

Powalla, M. ^{[4
]}

Heske, C. ^{[1
,2
,5
]}

Weinhardt, L. ^{[1
,2
,5
]}

机构：

[1] Karlsruhe Inst Technol, Inst Photon Sci & Synchrotron Radiat IPS, Hermann v Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany

[2] Karlsruhe Inst Technol, Inst Chem Technol & Polymer Chem ITCP, Engesserstr 18-20, D-76128 Karlsruhe, Germany

[3] Univ Wurzburg, Expt Phys 7, D-97074 Wurzburg, Germany

[4] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, Meitnerstr 1, D-70563 Stuttgart, Germany

[5] Univ Nevada, Dept Chem & Biochem, 4505 Maryland Pkwy, Las Vegas, NV 89154 USA

来源：

ACS ENERGY LETTERS | 2017年 / 2卷 / 10期

关键词：

BAND ALIGNMENT; CD2+/NH3 TREATMENT; SURFACE; PERFORMANCE; INTERFACE; MODULES;

D O I：

10.1021/acsenergylett.7b00720

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Recently, a world-record efficiency of 22.6% was achieved by applying a RbF postdeposition treatment (PDT) on a Cu(In,Ga)Se-2 (CIGSe) thin-film solar cell absorber surface. Here, we study the impact of this RbF-PDT on the electronic structure of the CIGSe surface and the CdS/CIGSe interface using ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS), as well as inverse photoemission spectroscopy (IPES). After RbF-PDT, we find a small downward shift of the band edges, while the surface band gap value itself is not affected. In addition, a further downward band bending in the CIGSe absorber is observed upon formation of the RbF-PDT CdS/CIGSe interface. We derive a flat conduction band alignment between the RbF-PDT CIGSe absorber and the CdS buffer, commensurate with the high efficiencies of solar cell devices prepared with RbF-PDT.

引用

页码：2383 / 2387

页数：5

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