Grain Growth in CdTe Films During CdCl2 Treatment: TeCl4 Theory

被引：0

作者：

Winger, Joshua R. ^{[1
]}

Scarpulla, Michael A. ^{[1
,2
]}

机构：

[1] Univ Utah, Mat Sci & Engn, Salt Lake City, UT 84112 USA

[2] Univ Utah, Elect & Comp Engn, Salt Lake City, UT 84112 USA

来源：

2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2019年

关键词：

CdTe; growth model; large grains; TeCl4;

D O I：

10.1109/pvsc40753.2019.8980923

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The process for growing very large CdTe grains on MZO has been explored with the CdCl2 treatment performed for 1-30 minutes for varying film thicknesses and deposition methods.. Large grain growth occurred for thick films after 15 min. at 450 degrees C. The minority lifetime also increased according to room temperature photoluminescence. The activation of the grain growth during the CdCl2 treatment is explained using the CdTe-CdCl2 phase diagram with preferential grain growth for Te rich grain boundaries explained by the Cd-Te-Cl Ternary phase diagram

引用

页码：1834 / 1838

页数：5

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