Detection of the valence band in buried Co2MnSi-MgO tunnel junctions by means of photoemission spectroscopy

被引：46

作者：

Fecher, Gerhard H. ^{[1
]}

Balke, Benjamin ^{[1
]}

Gloskowskii, Andrei ^{[1
]}

Ouardi, Siham ^{[1
]}

Felser, Claudia ^{[1
]}

Ishikawa, Takayuki ^{[2
]}

Yamamoto, Masafumi ^{[2
]}

Yamashita, Yoshiyuki ^{[3
]}

Yoshikawa, Hideki ^{[3
]}

Ueda, Shigenori ^{[3
]}

Kobayashi, Keisuke ^{[3
]}

机构：

[1] Johannes Gutenberg Univ Mainz, Inst Anorgan Chem & Analyt Chem, D-55099 Mainz, Germany

[2] Hokkaido Univ, Div Elect Informat, Sapporo, Hokkaido 0600814, Japan

[3] Natl Inst Mat Sci, Mikazuki, Hyogo 6795148, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 19期

关键词：

D O I：

10.1063/1.2931089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work reports on the detection of the valence band of buried Heusler compounds by means of hard x-ray photoemission spectroscopy. The measurements have been performed on the so-called "half" tunnel junctions that are thin films of Co2MnSi underneath MgO. Starting from the substrate, the structure of the samples is MgO(buffer)-Co2MnSi-MgO(t(MgO))-AlOx with a thickness tMgO of the upper MgO layer of 2 and 20 nm. The valence band x-ray photoemission spectra have been excited by hard x rays of about 6 keV energy. The valence band spectra have been used to estimate the mean free path of the electrons through the MgO layer to be 17 nm at kinetic energies of about 6 keV. In particular, it is shown that the buried Co2MnSi films exhibit the same valence density of states as in bulk samples. (c) 2008 American Institute of Physics.

引用

页数：3

共 24 条

[1] Properties of the quaternary half-metal-type Heusler alloy Co2Mn1-xFexSi
Balke, Benjamin
Fecher, Gerhard H.
Kandpal, Hem C.
Felser, Claudia
Kobayashi, Keisuke
Ikenaga, Eiji
Kim, Jung-Jin
Ueda, Shigenori
[J]. PHYSICAL REVIEW B, 2006, 74 (10)
[2] NEW CLASS OF MATERIALS - HALF-METALLIC FERROMAGNETS
DEGROOT, RA
MUELLER, FM
VANENGEN, PG
BUSCHOW, KHJ
[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (25) : 2024 - 2027
[3] Large tunnel magnetoresistance in tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode
Ebke, D.
Schmalhorst, J.
Liu, N. -N.
Thomas, A.
Reiss, G.
Huetten, A.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (16)
[4] High energy, high resolution photoelectron spectroscopy of Co2Mn1-xFexSi
Fecher, Gerhard H.
Balke, Benjamin
Ouardi, Siham
Felser, Claudia
Schoenhense, Gerd
Ikenaga, Eiji
Kim, Jung-Jin
Ueda, Shigenori
Kobayashi, Keisuke
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (06) : 1576 - 1581
[5] Spintronics: A challenge for materials science and solid-state chemistry
Felser, Claudia
Fecher, Gerhard H.
Balke, Benjamin
[J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2007, 46 (05) : 668 - 699
[6] Structural and magnetic properties and tunnel magnetoresistance for Co2(Cr,Fe)Al and Co2FeSi full-Heusler alloys
Inomata, K
Okamura, S
Miyazaki, A
Kikuchi, M
Tezuka, N
Wojcik, M
Jedryka, E
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (05) : 816 - 823
[7] Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co2MnSi thin film and a MgO tunnel barrier
Ishikawa, T.
Marukame, T.
Kijima, H.
Matsuda, K. -I.
Uemura, T.
Arita, M.
Yamamoto, M.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (19)
[8] Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
Ishikawa, Takayuki
Hakamata, Shinya
Matsuda, Ken-ichi
Uemura, Tetsuya
Yamamoto, Masafumi
[J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (07)
[9] Room-temperature preparation and magnetic behavior of Co2MnSi thin films
Kämmerer, S
Heitmann, S
Meyners, D
Sudfeld, D
Thomas, A
Hütten, A
Reiss, G
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 7945 - 7947
[10] Correlation in the transition-metal-based Heusler compounds Co2MnSi and Co2FeSi
Kandpal, HC
Fecher, GH
Felser, C
Schönhense, G
[J]. PHYSICAL REVIEW B, 2006, 73 (09)

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