Electron motion three-dimensional confinement for microelectronic vacuum gauges with field emitters

被引:2
|
作者
Nicolaescu, D [1 ]
Kanemaru, S
Filip, V
Itoh, J
机构
[1] Natl Inst Adv Ind Sci & Technol, Elect Lab, Tsukuba, Ibaraki 3058568, Japan
[2] Univ Bucharest, Fac Phys, Bucharest 76900, Romania
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 4A期
关键词
field emission; vacuum microelectronics; vacuum gauge; three-dimensional confinement;
D O I
10.1143/JJAP.40.2165
中图分类号
O59 [应用物理学];
学科分类号
摘要
Novel microelectronics vacuum gauges using field emitters are proposed and the three-dimensional (3D) confinement of electron motion is numerically analyzed. For the case of magnetron and inverted-magnetron structures, the two-dimensional (2D) confinement of electron motion takes place when the electrons move subject to crossed electric E and magnetic B fields, The radial electric field is applied between two cylindrical surfaces coaxial around the X axis, which is also the direction of the applied magnetic field B. A similar structure named "orbitip" is used for electron 2D confinement without magnetic fields for special conditions concerning the electron launching. For all above-mentioned devices, designs involving a region of minimal potential energy for the electron along the axial X direction may ensure the electron motion confinement along this direction. Such configurations are obtained if the inner cylindrical electrode (or the outer one, or both) has a variable radius and also an external planar electrode is used.
引用
收藏
页码:2165 / 2172
页数:8
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