Dynamical effects in the interaction of ion beams with solids

被引：28
|
作者：
Hatcher, Ryan [1 ]
Beck, Matthew [1 ]
Tackett, Alan [1 ]
Pantelides, Sokrates T. [1 ,2 ]
机构：
[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
[2] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
来源：
PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 10期
关键词：
D O I：
10.1103/PhysRevLett.100.103201
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Calculations of the stopping power (SP) of ion beams in solids have been based on a homogeneous electron gas scattering off a static atom and entail at least one free parameter. Here we report dynamical simulations of ions channeled in silicon. Time-dependent density-functional theory (TDDFT) is used. The calculated SPs are in excellent agreement with the observed oscillatory dependence on atomic number. TDDFT calculations for a homogeneous electron gas demonstrate that both dynamical response and nonuniformities in the electron density are essential to reproduce the data without free parameters.
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页数：4
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