Two types of sulfur-induced (2 x 1) reconstructions on InP(001)

被引：4

作者：

Preobrajenski, AB

Gebhardt, RK

Uhlig, I

Chassé, T

机构：

[1] Univ Leipzig, Wilhelm Ostwald Inst Phys & Theoret Chem, D-04103 Leipzig, Germany

[2] Inst Oberflachenmodifizierung, D-04318 Leipzig, Germany

来源：

SURFACE SCIENCE | 2001年 / 481卷 / 1-3期

关键词：

semiconducting surfaces; surface structure; morphology; roughness; and topography; photoelectron spectroscopy; low energy electron diffraction (LEED); indium phosphide; sulphur;

D O I：

10.1016/S0039-6028(01)01053-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A novel method of surface sulfurization based on in situ PbS deposition at elevated substrate temperatures followed by successive annealing has been used for investigation of sulfur-induced surface reconstructions on InP(0 0 1)-(2 x 4). Two different (2 x 1) reconstructions have been observed by low-energy electron diffraction at 200-410 degreesC and 420-445 degreesC, respectively, separated from each other by a (1 x 1)pattern in the range of 410-420 degreesC. A consistent examination of the results provided by electron diffraction and photoemission techniques has allowed us to propose models of atomic arrangement for both observed (2 x 1) structures. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1 / 12

页数：12

共 25 条

[1] SULFURIZATION OF INP(001) SURFACES STUDIED BY X-RAY PHOTOELECTRON AND X-RAY-INDUCED AUGER-ELECTRON SPECTROSCOPIES (XPS/XAES) [J].