Single-band negative differential resistance in metallic armchair MoS2 nanoribbons

被引：8

作者：

Chen, Cheng ^{[1
]}

Wang, Xue-Feng ^{[1
,2
]}

Li, Yao-Sheng ^{[1
]}

Cheng, Xue-Mei ^{[1
]}

Yao, A-Long ^{[1
]}

机构：

[1] Soochow Univ, Coll Phys Optoelect & Energy, Jiangsu Key Lab Thin Films, 1 Shizi St, Suzhou 215006, Peoples R China

[2] Chinese Acad Sci, Key Lab Terahertz Solid State Technol, 865 Changning Rd, Shanghai 200050, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 46期

基金：

中国国家自然科学基金;

关键词：

negative differential resistance; MoS2; nanoribbons; spin polarization; edge functionalization; ELECTRIC-FIELD;

D O I：

10.1088/1361-6463/aa8b5c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semiconductor armchair MoS2 nanoribbons can be converted into conductors by edge functionalization of H atoms or OH groups. Those metallic nanoribbons exhibit I-V characteristics of a single half-filled band with strong negative differential resistance (NDR) under a voltage bias less than 1 V. This originates from the spatial separation between electrons in the conduction and valence bands. The NDR becomes spin dependent if the H atoms or OH groups are not uniformly adsorbed on the edge. Furthermore, the spin polarization can be greatly enhanced in heterojunctions of H- and OH-passivated nanoribbons.

引用

页数：5

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