Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

被引：40

作者：

Leszczynski, M. ^{[1
,2
]}

Czernecki, R. ^{[1
,2
]}

Krukowski, S. ^{[1
]}

Krysko, M. ^{[1
]}

Targowski, G. ^{[2
]}

Prystawko, P. ^{[1
,2
]}

Plesiewicz, J. ^{[2
]}

Perlin, P. ^{[1
,2
]}

Suski, T. ^{[1
]}

机构：

[1] Inst High Pressure Phys UNIPRESS, PL-01142 Warsaw, Poland

[2] TopGaN, Warsaw, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期

关键词：

Growth models; Metalorganic vapor phase epitaxy; Nitrides; Semiconductor ternary compounds; QUANTUM-WELLS; GAN;

D O I：

10.1016/j.jcrysgro.2010.10.050

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Experimental data on indium incorporation in InGaN and InAlN layers grown by metalorganic chemical vapor epitaxy (MOVPE) on bulk GaN substrates are presented and discussed. For the step-flow growth mode, realized for InGaN layers grown at relatively high temperatures (around 800 C), incorporation of indium increases with growth rate, and similarly, with a decrease in GaN substrate misorientation. Both dependences are explained by a higher velocity of flowing steps incorporating the indium atoms. For InAlN layers, three-dimensional nucleation takes place, and thus no significant changes of indium incorporation versus either growth rate or GaN substrate misorientation were observed. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：496 / 499

页数：4

共 13 条

[1] InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers [J].

Akasaka, Tetsuya ;

Gotoh, Hideki ;

Kobayashi, Yasuyuki ;

Nakano, Hidetoshi ;

Makimoto, Toshiki .

APPLIED PHYSICS LETTERS, 2006, 89 (10)

[2] Current status of AlInN layers lattice-matched to GaN for photonics and electronics [J].

Butte, R. ;

Carlin, J-F ;

Feltin, E. ;

Gonschorek, M. ;

Nicolay, S. ;

Christmann, G. ;

Simeonov, D. ;

Castiglia, A. ;

Dorsaz, J. ;

Buehlmann, H. J. ;

Christopoulos, S. ;

von Hoegersthal, G. Baldassarri Hoeger ;

Grundy, A. J. D. ;

Mosca, M. ;

Pinquier, C. ;

Py, M. A. ;

Demangeot, F. ;

Frandon, J. ;

Lagoudakis, P. G. ;

Baumberg, J. J. ;

Grandjean, N. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (20) :6328-6344

[3] Optical properties of InGaN quantum wells [J].

Chichibu, SF ;

Abare, AC ;

Mack, MP ;

Minsky, MS ;

Deguchi, T ;

Cohen, D ;

Kozodoy, P ;

Fleischer, SB ;

Keller, S ;

Speck, JS ;

Bowers, JE ;

Hu, E ;

Mishra, UK ;

Coldren, LA ;

DenBaars, SP ;

Wada, K ;

Sota, T ;

Nakamura, S .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3) :298-306

[4] Growth and characterization of bulk InGaN films and quantum wells [J].

Keller, S ;

Keller, BP ;

Kapolnek, D ;

Abare, AC ;

Masui, H ;

Coldren, LA ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1996, 68 (22) :3147-3149

[5] Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD [J].

Kobayashi, JT ;

Kobayashi, NP ;

Zhang, X ;

Dapkus, PD ;

Rich, DH .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :252-257

[6]

KRET S, NANOTECHNOLOGY, V18

[7]

KRYSKO M, PHYS STATUS SOLIDI R, V4

[8] Nitride-based quantum structures and devices on modified GaN substrates [J].

Perlin, Piotr ;

Franssen, Gijs ;

Szeszko, Justyna ;

Czernecki, R. ;

Targowski, Grzegorz ;

Krysko, Marcin ;

Grzanka, Szymon ;

Nowak, Grzegorz ;

Litwin-Staszewska, Elzbieta ;

Piotrzkowski, Ryszard ;

Leszczynski, Mike ;

Lucznik, Bolek ;

Grzegory, Izabella ;

Jakiela, Rafal ;

Albrecht, Martin ;

Suski, Tadek .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (06) :1130-1134

[9]

RYU HY, P SPIE, V6352

[10] MOVPE of GaInN heterostructures and quantum wells [J].

Scholz, F ;

Off, J ;

Sohmer, A ;

Syganow, V ;

Dornen, A ;

Ambacher, O .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :8-12

← 1 2 →