High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees C

被引：9

作者：

Chin, A ^{[1
]}

Lin, BC ^{[1
]}

Chen, WJ ^{[1
]}

机构：

[1] NATL YUN LIN POLYTECH INST,DEPT MECH MAT ENGN,HUWEI,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 11期

关键词：

D O I：

10.1063/1.117049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have designed a simple-hot wall low pressure chemical vapor deposition (LPCVD) system to grow high quality epitaxial Si films from 550 to 900 degrees C. The epitaxial film has been examined by scan electron microscopy for surface morphology, and by x-ray diffraction and cross-sectional transmission electron microscopy for crystallinity. Its quality has been found comparable to that of the substrate. Reduction of moisture and oxygen in the ambient is critical to the success of the growth at low temperatures. A combination of a leak-tight LPCVD reactor, a high flow rate Of 61/min of H-2 purge, and a pre-bake at high temperature of 950 degrees C has been used to achieve the reduction of moisture and oxygen. Degraded films form with increasing full width at half maximum of x-ray diffraction peak when a pre-bake at lower temperature is used. (C) 1996 American Institute of Physics.

引用

页码：1617 / 1619

页数：3

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