InP-based monolithic RFPD/HBT photoreceivers integrated with on-chip InPV-grooves

被引：9

作者：

Lee, B ^{[1
]}

Yang, K ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Div Elect Engn, Taejon 305701, South Korea

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 16期

关键词：

Heterojunction bipolar transistors - Light absorption - Optical fibers - Photodiodes - Semiconducting indium phosphide - Substrates;

D O I：

10.1049/el:20030763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP-based OEIC photoreceivers have been fabricated using a shared layer integration scheme of refracting facet photodiodes (RFPDs) and heterojunction bipolar transistors (HBTs) (for the first time, to the authors' knowledge). Furthermore, on-chip InP V-grooves were monolithically integrated with RFPD/HBT photoreceivers for efficient optical coupling with optical fibres.

引用

页码：1203 / 1204

页数：2

共 6 条

[1]

Bhattacharya P, SEMICONDUCTOR OPTOEL

[2]

BLASER M, 1994, P INP REL MAT SANT B, P239

[3] Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage [J].