Horizontally-connected ZnO-graphene hybrid films for multifunctional devices

被引:10
作者
Lim, Yi Rang [1 ,2 ]
Song, Wooseok [1 ]
Lee, Young Bum [1 ]
Kim, Seong Ku [1 ]
Han, Jin Kyu [1 ]
Myung, Sung [1 ]
Lee, Sun Sook [1 ]
An, Ki-Seok [1 ]
Choi, Chel-Jong [2 ]
Lim, Jongsun [1 ]
机构
[1] Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
[2] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea
关键词
ZnO/graphene hybrid films; Photodetectors; Thin film transistors; THIN-FILM; RESPONSIVITY; TRANSISTORS;
D O I
10.1016/j.apsusc.2016.04.068
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Here we designed horizontally-connected ZnO thin films and graphene in order to combine advantages of ZnO thin films, which are high on/off ratio and photo responsivity, and the superior mobility and sensitivity of graphene for applications in thin film transistors (TFTs) and flexible photodetectors. To synthesize the ZnO/graphene hybrid films, a 70-nm-thick ZnO thin film with a uniformly flat surface deposited by the atomic layer deposition process was horizontally connected with highly crystalline monolayer graphene grown by thermal chemical vapor deposition. The photocurrent on-off ratio, response time, and recovery time of the hybrid photodetectors were estimated to be 10(2), 34 s, and 27 s, respectively. The photocurrent from the hybrid photodetector decreased only by two-fold, whereas a significant decrease in photocurrent by two orders of magnitude was observed from the ZnO thin film based photodetectors after 10(5) cycles of 5-mm radius bending. The hybrid TFT exhibited unipolar n-channel transistor behavior with electron mobility of 68.7 cm(2)/V s and on-off ratio of 10(7). (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:238 / 241
页数:4
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