Quinoidal oligothiophenes: new properties behind an unconventional electronic structure

被引：226

作者：

Casado, Juan ^{[1
]}

Ponce Ortiz, Rocio ^{[1
]}

Lopez Navarrete, Juan T. ^{[1
]}

机构：

[1] Univ Malaga, Dept Phys Chem, E-29071 Malaga, Spain

来源：

CHEMICAL SOCIETY REVIEWS | 2012年 / 41卷 / 17期

关键词：

END-CAPPED OLIGOTHIOPHENES; HEAD-TO-HEAD; TERTHIOPHENE-BASED QUINODIMETHANE; ORGANIC SEMICONDUCTORS; GROUND-STATE; DIHEXYLBITHIENOQUINONOID DERIVATIVES; ISOMERIZATION BARRIERS; HETEROQUINONOID SYSTEM; LONG OLIGOTHIOPHENES; CONDUCTIVE COMPLEXES;

D O I：

10.1039/c2cs35079c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The main chemical, spectroscopic and material research done in tetracyano quinoidal oligothiophenes in the last 30 years has been reviewed. Their use as semiconducting substrates in organic electronic and their versatility to act as multifunctional materials have been highlighted. This tutorial review has been paralleled by the description of the main findings provided by Raman spectroscopy, in particular, associated with the discovery of the intrinsic diradical properties inherent to the pro-aromatic character of the quinoidal arrangement. It turns out that the fascinating properties of these materials are the manifestation of the diradical fingerprint behind a rather unconventional electronic structure.

引用

页码：5672 / 5686

页数：15

共 96 条

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