Microwave dielectric properties of graded barium strontium titanate films

被引：65
|
作者：
Cole, M. W. [2 ]
Weiss, C. V. [1 ,3 ]
Ngo, E. [2 ]
Hirsch, S. [2 ]
Coryell, L. A. [4 ]
Alpay, S. P. [1 ,3 ]
机构：
[1] Univ Connecticut, Mat Sci & Engn Program, Storrs, CT 06269 USA
[2] USA, Res Lab, Act Mat Res Grp, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
[3] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA
[4] USA, Commun & Elect Res Dev & Engn Ctr, Space & Terr Commun Directorate, Ft Monmouth, NJ 07703 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 18期
关键词：
D O I：
10.1063/1.2919080
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Compositionally graded barium strontium titanate (BaxSr1-xTiO3 or BST) multilayers (5 mol % MgO doped and undoped) were prepared via metallo-organic solution deposition on Pt-Si substrates and characterized electrically at 0.5, 5, and 10 GHz. For the undoped BST multilayers, the small-signal dielectric response, tunability, and the loss tangent at 10 GHz were 261, 25% at 1778 kV/cm, and 0.078, respectively. On the other hand, the Mg-doped BST multilayers displayed a significant improvement in the loss characteristics at 10 GHz (0.039) but the dielectric response and its tunability were lower (189 and 15%, respectively, at 1778 kV/cm). (c) 2008 American Institute of Physics.
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页数：3
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