Ferroelectric thin films of PbTiO3 on silicon

被引：44

作者：

Palkar, VR ^{[1
]}

Purandare, SC ^{[1
]}

Pinto, R ^{[1
]}

机构：

[1] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1999年 / 32卷 / 01期

关键词：

D O I：

10.1088/0022-3727/32/1/001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The advantages offered by ferroelectric PbTiO3 films deposited directly onto silicon in memory applications, field effect devices and pyroelectric detectors have stimulated intense research activity. This review covers work carried out during the last several years on their growth, characterization and device fabrication using ferroelectric thin films of PbTiO3 on single-crystalline Si substrate with and without buffer layers.

引用

页码：R1 / R18

页数：18

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