Development of 3D detectors featuring columnar electrodes of the same doping type

被引：76

作者：

Piemonte, C

Boscardin, M

Dalla Betta, GF

Ronchin, S

Zorzi, N

机构：

[1] ITC, Microsyst Div, I-38050 Trento, Italy

[2] Univ Trent, DIT, Trento, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2005年 / 541卷 / 1-2期

关键词：

silicon detectors; fabrication technology; device simulations; 3D detectors; DRIE etching;

D O I：

10.1016/j.nima.2005.01.087

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We present a new 3D detector architecture aimed at simplifying the manufacturing process making it more suitable for high volume production. In particular, the proposed device features electrodes of one doping type only, e.g., n(+) columns in a p-type substrate. We report on TCAD simulation results providing deep insight into the static and dynamic behavior of this detector, highlighting its advantages and potential drawbacks. The fabrication process we intend to use is also described along with results from the morphological characterization of the most critical technological steps. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：441 / 448

页数：8

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