Characterization of electrical contacts on polycrystalline 3C-SiC thin films

被引：0
|
作者：
Castaldini, A
Cavallini, A
Rossi, M
Cocuzza, M
Ricciardi, C
机构：
[1] Univ Bologna, Dept Phys, I-40127 Bologna, Italy
[2] Politecn Torino, Dept Phys, I-10129 Turin, Italy
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
cubic 3C(beta)-SiC; low pressure chemical vapor deposition (LPCVD); atomic force microscopy (AFM); surface photovoltage spectroscopy (SPS); transmission line method (TLM); specific contact resistivity (rho(c)); transfer length (L-T);
D O I：
10.4028/www.scientific.net/MSF.483-485.745
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the investigation of electrical properties of polycrystalline 3C-SiC thin films deposited on oxidized Si by low pressure chemical vapor deposition (LPCVD) to obtain bilayer structures [Si(100)/SiO2/poly 3C-SiC] for pressure sensors and micro-electromechanical system (MEMS) applications. Polycrystalline 3C-SiC films have been preliminary characterized in their compositional, structural, morphological and electrical properties. Moreover, metal contact definition has been carefully optimized by transmission line method (TLM) analyses performed at different temperatures. We focuses the attention on the evaluation of the bulk resistivity (p), the specific contact resistivity (p(c)) and their behavior dependence on the temperature because these are the characteristics of major importance for the fabrication of pressure sensors or MEMS.
引用
收藏
页码：745 / 748
页数：4
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