Electrical characterization of Pt/SrBi2Ta2O9/Pt capacitors fabricated by the pulsed laser ablated deposition technique

被引:30
作者
Lee, JK [1 ]
Jung, HJ [1 ]
Auciello, O [1 ]
Kingon, AI [1 ]
机构
[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 03期
关键词
D O I
10.1116/1.580411
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Pulsed laser ablation deposition was used to synthesize polycrystalline SrBi2Ta2O9 layered ferroelectric thin films on the platinized silicon substrate. The surface roughness of the deposited film was an average of 4 nm. The titanium element was diffused to the SrBi2Ta2O9 layer through the platinum layer. P-E hysteresis loop for the Pt/SrBi2Ta2O9/Pt/Ti capacitor was well saturated and symmetric (P-r = 3 mu C/cm(2), E(c) = 25 kV/cm). (C) 1996 American Vacuum Society.
引用
收藏
页码:900 / 904
页数:5
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