On the switching mechanism in Rose Bengal-based memory devices

被引：31
|
作者：
Jakobsson, Fredrik L. E. [1 ]
Crispin, Xavier
Colle, Michael
Buchel, Michael
de Leeuw, Dago M.
Berggren, Magnus
机构：
[1] Linkoping Univ, Dept Sci & Technol ITN, S-60174 Norrkoping, Sweden
[2] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands
来源：
ORGANIC ELECTRONICS | 2007年 / 8卷 / 05期
关键词：
lmpedance switching; resistance switching; filaments; Rose Bengal; indium tin oxide; aluminum;
D O I：
10.1016/j.orgel.2007.04.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Impedance switching has been observed in many organic devices, but the mechanism is still a matter of debate. Reliable switch devices consisting of an organic layer of Rose Bengal derivatives sandwiched in between indium tin oxide and aluminum electrodes were fabricated. Modifying the chemical nature of the organic layers and visualizing the temperature distribution in the organic memory rule out several mechanisms. It is shown that the memory effect originates from filamentary switching. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：559 / 565
页数：7
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