Properties of B and P doped Ge nanowires

被引：32

作者：

Peelaers, H. ^{[1
]}

Partoens, B. ^{[1
]}

Peeters, F. M. ^{[1
]}

机构：

[1] Univ Antwerp, Dept Fys, B-2020 Antwerp, Belgium

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 26期

关键词：

D O I：

10.1063/1.2752107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ab initio study of the formation and segregation energies of B and P doped Ge nanowires oriented along the [110] direction is performed for fully relaxed H-passivated nanowires. The authors found the preferential dopant positions and the associated formation energies. Edge positions are favorable positions for both types of dopants. In the presence of dangling bond defects P dopants will highly favor the edge positions near the dangling bond, thereby trapping the additional carrier. The results are compared with those found for doped Si nanowires. (c) 2007 American Institute of Physics.

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页数：3

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