Properties of B and P doped Ge nanowires

被引：32

作者：

Peelaers, H. ^{[1
]}

Partoens, B. ^{[1
]}

Peeters, F. M. ^{[1
]}

机构：

[1] Univ Antwerp, Dept Fys, B-2020 Antwerp, Belgium

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 26期

关键词：

D O I：

10.1063/1.2752107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ab initio study of the formation and segregation energies of B and P doped Ge nanowires oriented along the [110] direction is performed for fully relaxed H-passivated nanowires. The authors found the preferential dopant positions and the associated formation energies. Edge positions are favorable positions for both types of dopants. In the presence of dangling bond defects P dopants will highly favor the edge positions near the dangling bond, thereby trapping the additional carrier. The results are compared with those found for doped Si nanowires. (c) 2007 American Institute of Physics.

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共 22 条

[1] Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure [J].

Alguno, A ;

Usami, N ;

Ujihara, T ;

Fujiwara, K ;

Sazaki, G ;

Nakajima, K ;

Shiraki, Y .

APPLIED PHYSICS LETTERS, 2003, 83 (06) :1258-1260

[2] Quantum confinement effects in Ge [110] nanowires [J].

Beckman, S. P. ;

Han, Jiaxin ;

Chelikowsky, James R. .

PHYSICAL REVIEW B, 2006, 74 (16)

[3] Excitons in germanium nanowires: Quantum confinement, orientation, and anisotropy effects within a first-principles approach [J].

Bruno, M ;

Palummo, M ;

Marini, A ;

Del Sole, R ;

Olevano, V ;

Kholod, AN ;

Ossicini, S .

PHYSICAL REVIEW B, 2005, 72 (15)

[4] Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species [J].

Cui, Y ;

Wei, QQ ;

Park, HK ;

Lieber, CM .

SCIENCE, 2001, 293 (5533) :1289-1292

[5] High performance silicon nanowire field effect transistors [J].

Cui, Y ;

Zhong, ZH ;

Wang, DL ;

Wang, WU ;

Lieber, CM .

NANO LETTERS, 2003, 3 (02) :149-152

[6] Diameter-controlled synthesis of single-crystal silicon nanowires [J].

Cui, Y ;

Lauhon, LJ ;

Gudiksen, MS ;

Wang, JF ;

Lieber, CM .

APPLIED PHYSICS LETTERS, 2001, 78 (15) :2214-2216

[7] Doping and electrical transport in silicon nanowires [J].

Cui, Y ;

Duan, XF ;

Hu, JT ;

Lieber, CM .

JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (22) :5213-5216

[8] Surface segregation and backscattering in doped silicon nanowires [J].

Fernández-Serra, MV ;

Adessi, C ;

Blase, X .

PHYSICAL REVIEW LETTERS, 2006, 96 (16)

[9] First-principles computation of material properties: the ABINIT software project [J].

Gonze, X ;

Beuken, JM ;

Caracas, R ;

Detraux, F ;

Fuchs, M ;

Rignanese, GM ;

Sindic, L ;

Verstraete, M ;

Zerah, G ;

Jollet, F ;

Torrent, M ;

Roy, A ;

Mikami, M ;

Ghosez, P ;

Raty, JY ;

Allan, DC .

COMPUTATIONAL MATERIALS SCIENCE, 2002, 25 (03) :478-492

[10] Optical properties of self-assembled Ge wires grown on Si(113) [J].

Halsall, MP ;

Omi, H ;

Ogino, T .

APPLIED PHYSICS LETTERS, 2002, 81 (13) :2448-2450