Electronic structure of Au-Si(100) interface as a function of Au coverage

We have investigated the Au-Si(1 0 0) interface as a function of the An coverage by means of the valence band and Au 4f core-level photoemission spectroscopy. At the initial stage of the An deposition, deposited An atoms are close to the atomic An. With increasing the An coverage, it is considered that the An silicide is formed by the influence of the substrate Si atoms. From the relative intensity ratio of the An 4f core-level spectrum to the Si 2p core-level spectrum, the appearance of the 3D islands was suggested at more than 12 ML. This means that the An deposited surface is not homogeneous. In addition, it was found that there are two chemically different Au silicide components from the curve fitting analysis of the An 4f core-level spectrum at the higher Au coverage. (c) 2005 Elsevier B.V. All rights reserved.