Polycrystalline silicon thin films obtained by metal-induced crystallization

被引：10
作者：
Dimova-Malinovska, D
Angelov, O
Kamenova, M
Sendova-Vassileva, M
Vaseashta, A
机构：
[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria
[2] Marshall Univ, Dept Phys, Huntington, WV 25755 USA
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2003年 / 14卷 / 10-12期
关键词：
D O I：
10.1023/A:1026164028445
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The formation of high-quality polycrystalline silicon (poly-Si) on different substrates has important applications in the development of thin-film transistors, solar cells, image sensors, etc. In this study, we present the results of an investigation of poly-Si films on glass, formed by aluminum-induced crystallization. The process is based on the isothermal annealing for 3 h at 500degreesC of co-sputtered Al + Si or sputtered a-Si films on glass, with and without thermally evaporated Al. The poly-Si films were investigated by Raman spectroscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy. (C) 2003 Kluwer Academic Publishers.
引用
收藏
页码：747 / 748
页数：2
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