Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

被引：62

作者：

Gao, Juan ^{[1
,2
]}

He, Gang ^{[1
]}

Xiao, Dongqi ^{[1
]}

Jin, Peng ^{[1
]}

Jiang, Shanshan ^{[1
]}

Li, Wendong ^{[1
]}

Liang, Shuang ^{[1
]}

Zhu, Li ^{[1
]}

机构：

[1] Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Anhui, Peoples R China

[2] Anhui Univ Sci & Technol, Sch Mech & Optoelect Phys, Huainan 232001, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2017年 / 33卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Germanium; Trimethylaluminum; Atomic layer deposition; Electrical properties; ATOMIC-LAYER-DEPOSITION; THERMAL-STABILITY; BAND ALIGNMENT; HFO2; DIELECTRICS; SUBSTRATE; QUALITY; AL2O3; CMOS; FILM;

D O I：

10.1016/j.jmst.2017.04.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the current work, in situ surface passivation Ge substrate by using trimethylaluminum (TMA) prior to HfTiO films deposition and electrical properties of HfTiO/Ge gate stacks have been investigated by X-ray photoelectron spectroscopy (XPS) and electrical measurements systematically. Based on analysis from XPS measurements, it has been confirmed that the interfacial layer of HfTiO/Ge gate stack has been suppressed effectively after 20 half-ALD cycles TMA pretreatment. Electrical properties of metal-oxide-semiconductor (MOS) capacitor based on HfTiO gate dielectrics have shown that the MOS capacitor with 20 cycles TMA cleaning exhibits the lowest interface state density (similar to 7.56 eV(-1) cm(-2)) and the smallest leakage current (similar to 2.67 x 10(-5) A/cm(2)). Correspondingly, the leakage current conduction mechanisms for MOS capacitor device with 20 cycles TMA cleaning also have been discussed in detail. (c) 2017 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

引用

页码：901 / 906

页数：6

共 34 条

[1] Photoemission studies of passivation of germanium nanowires [J].