High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

被引：119

作者：

Tokuda, Hirokuni ^{[1
]}

Hatano, Maiko ^{[1
]}

Yafune, Norimasa ^{[2
]}

Hashimoto, Shin ^{[3
]}

Akita, Katsushi ^{[3
]}

Yamamoto, Yoshiyuki ^{[3
]}

Kuzuhara, Masaaki ^{[1
]}

机构：

[1] Univ Fukui, Fukui 9108507, Japan

[2] Sharp Co Ltd, Nara 6328567, Japan

[3] Sumitomo Elect Ind Ltd, Itami, Hyogo 6640016, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 12期

关键词：

HEMTS; PERFORMANCE;

D O I：

10.1143/APEX.3.121003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN-channel high-electron-mobility transistor (HEMT) with high Al composition of 0.51 has been developed. The epitaxial layers were grown on a free-standing AlN substrate to improve crystalline quality. The fabricated device exhibited a maximum drain current (I-dsmax) of 25.2 mA/mm with a maximum transconductance (g(mmax)) of 4.7 mS/mm. The characteristic features of the device were a high source-to-drain breakdown voltage of 1800 V and a high applicable gate-to-source voltage of 4 V in the forward direction. Temperature dependence of DC characteristics demonstrated that the drain current degradation at elevated temperatures for the AlGaN-channel HEMT was appreciably small as compared with the conventional AlGaN/GaN HEMT. This is the first report showing successful DC operation of AlGaN-channel HEMT with high Al composition of over 0.5. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

共 14 条

[1] AlGaN/GaN HEMT With 300-GHz fmax [J].