The optimum fin width in p-MuGFETs with the consideration of NBTI and hot carrier degradation

被引:3
|
作者
Kim, Dong Wook [2 ]
Park, Woo Sang [2 ]
Park, Jong Tae [1 ]
机构
[1] Univ Incheon, Dept Elect Eng, Inchon 402749, South Korea
[2] Inha Univ, Sch Elect Eng, Inchon, South Korea
关键词
BIAS TEMPERATURE INSTABILITY; BODY; SOI; MOSFETS; STRESS;
D O I
10.1016/j.microrel.2010.07.088
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Generally it is known that NBTI degradation increases with decrease of a channel width in p-MOSFETs but hot carrier degradation decreases. In this work, a guideline for the optimum fin width in p-MuGFETs is suggested with consideration of NBTI and hot carrier degradation. Using the device lifetime defined as the stress time necessary to reach Delta V-TH = 10 mV, the optimum fin widths have been extracted for different stress voltages and temperatures. When a fin width is narrower than the optimum fin width, the device lifetime is governed by the NBTI degradation. However, when fin width is wider than the optimum fin width, the device lifetime is dominantly governed by hot carrier degradation. The optimum fin width decreases with the increase of the stress voltage but it increases with the increase of the stress temperature. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1316 / 1319
页数:4
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