A D-Band Waveguide-SIW Transition for 6G Applications

被引：13

作者：

Altaf, Amir ^{[1
]}

Elahi, Manzoor ^{[2
]}

Abbas, Syed Muzahir ^{[3
]}

Yousaf, Jawad ^{[4
]}

Almajali, Eqab ^{[5
]}

机构：

[1] Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon, South Korea

[2] Chung Ang Univ, Dept Elect & Elect Engn, Seoul, South Korea

[3] Macquarie Univ, Fac Sci & Engn, Sch Engn, Sydney, NSW, Australia

[4] Abu Dhabi Univ, Dept Elect Comp & Biomed Engn, Abu Dhabi, U Arab Emirates

[5] Univ Sharjah, Dept Elect Engn, Sharjah, U Arab Emirates

来源：

JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE | 2022年 / 22卷 / 04期

关键词：

SIW Technology; Waveguide-PCB Transition; 6G Communication;

D O I：

10.26866/jees.2022.4.r.104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a design of a transition from a standard D-band waveguide to substrate integrated waveguide (SIW) technology is presented for 6G applications. The waveguide is connected to an SIW by carving a slot at the bottom metal of the printed circuit board (PCB). A pair of vias is added to shift the inband null to a higher frequency, whereas a parasitic patch is used to improve impedance matching. A prototype of a back-to-back SIW transition is fabricated and measured using D-band VNA extenders. The measurement shows a -10 dB impedance bandwidth of 26.5 GHz (135-161.5 GHz) and a 3-dB bandwidth of 28 GHz (133.8-161.8 GHz). The transition can be integrated with a D-band antenna for 6G applications.

引用

页码：419 / 426

页数：8

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