An Output-Capacitorless Low Dropout Regulator without Resistors

被引：0
作者：
Mei, Jie [1 ]
Zhang, Hao [1 ]
Yoshihara, Tsutomu [1 ]
机构：
[1] Waseda Univ, Grad Sch Informat Prod & Syst, Fukuoka 8080135, Japan
来源：
2014 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC) | 2014年
关键词：
low voltage; embedded voltage reference; temperature coefficient; Output-Capacitorless low-dropout regulator;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
An all-MOSFET low-power low-dropout regulator is designed in CMOS technology, featuring low sensitivity with respect to input voltage and temperature. Supply voltage can be as low as 800mV. An error amplify (EA) with an embedded voltage reference (EVR) is employed and a buffer is used to improve the load transient. The circuit is simulated in 0.18 mu m CMOS technology. Simulated results verify that the proposed LDO is stable for a capacitive load from 0 to 10 pF and with load capability of 50 mA. The maximum overshoot and undershoot under a 0.8 V supply are less than 90 m V for full load current changes within 1 mu S edge time, and the recovery time is less than 1.5 mu S. The temperature coefficient (TC) is 37.8 ppm/degrees C ranging from -25 degrees C to 100 degrees C.
引用
收藏
页码：246 / 247
页数：2
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