Dynamic quantum-confined stark effect in self-assembled InAs quantum dots

被引：26

作者：

Gurioli, M

Sanguinetti, S

Henini, M

机构：

[1] Univ Milano Bicocca, Inst Nazl Fis Mat, I-20125 Milan, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[4] Univ Florence, European Lab Nonlinear Spect, I-50125 Florence, Italy

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 07期

关键词：

D O I：

10.1063/1.1348305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a detailed investigation of the carrier dynamics in a set of InAs/GaAs (N11) quantum dots (QD) by means of time-resolved photoluminesce (PL) techniques. A dynamical red shift of the PL bands when increasing the delay time after the pulse excitation is observed. We attribute this intrinsic optical nonlinearity to the photoinduced screening of internal built-in electric field. The value of the redshift of the QD emission band decays with the carrier population demonstrating the intrinsic nature of the built-in field. Its dependence on the substrate orientation and termination agrees with the expected piezoelectric induced quantum confined Stark effects of the QD optical transitions. (C) 2001 American Institute of Physics.

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页码：931 / 933

页数：3

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