Phase stability of hafnium oxide and zirconium oxide on silicon substrate

被引：15

作者：

Shin, Dongwon ^{[1
]}

Liu, Zi-Kui ^{[1
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

SCRIPTA MATERIALIA | 2007年 / 57卷 / 03期

基金：

美国国家科学基金会;

关键词：

thin films; silicides; thermodynamics; CALPHAD; first-principles electron theory;

D O I：

10.1016/j.scriptamat.2007.04.011

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Phase stabilities of Hf-Si-O and Zr-Si-O have been studied with first-principles and thermodynamic modeling. From the obtained thermodynamic descriptions, phase diagrams pertinent to thin film processing were calculated. We found that the relative stability of the metal silicates with respect to their binary oxides plays a critical role in silicide formation. It was observed that both the HfO2/Si and ZrO2/Si interfaces are stable in a wide temperature range and silicide may form at low temperatures, partially at the HfO2/Si interface. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：201 / 204

页数：4

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