Influence of dislocation decoration with mobile donors on exciton luminescence in ZnO crystals

被引：6

作者：

Markevich, I. V. ^{[1
]}

Kushnirenko, V. I. ^{[1
]}

Borkovska, L. V. ^{[1
]}

Bulakh, B. M. ^{[1
]}

Rusavsky, A. V. ^{[1
]}

机构：

[1] NASU, V Lashkarev Inst Semicond Phys, 45 Prospekt Nauki, UA-03028 Kiev, Ukraine

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8 | 2007年 / 4卷 / 08期

关键词：

D O I：

10.1002/pssc.200675473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In ZnO single crystals, the influence of grown-in and introduced by mechanical damage dislocations on room temperature exciton luminescence was investigated. It was found that the higher dislocation density the weaker the luminescence and the lower the intensity of its short-wavelength side with respect to that of long-wavelength one. After introduction of dislocations, gradual quenching of exciton luminescence and the suppression of its short-wavelength side took place. Observed effects were accounted for by the formation of optical absorption "tail" due to decoration of dislocations with mobile shallow donors, which resulted in the increase of reabsorption of emitted light in the crystal.

引用

页码：3086 / +

页数：2

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