Cryogenic amplifier for fast real-time detection of single-electron tunneling

被引：60

作者：

Vink, I. T.

Nooitgedagt, T.

Schouten, R. N.

Vandersypen, L. M. K.

Wegscheider, W.

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands

[2] Univ Regensburg, Inst Angew & Expt Phys, D-93040 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 12期

关键词：

D O I：

10.1063/1.2783265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors employ a cryogenic high electron mobility transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1 K and the circuit has a bandwidth of 1 MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than that of the QPC shot noise. The authors use this setup to monitor single-electron tunneling to and from an adjacent quantum dot. The authors measure fluctuations in the dot occupation as short as 400 ns, 20 times faster than in previous work. (c) 2007 American Institute of Physics.

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页数：3

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