Investigation of the Electric Structures of Heterointerfaces in Pt- and In2S3-Modified CuInS2 Photocathodes Used for Sunlight-Induced Hydrogen Evolution

被引：59

作者：

Gunawan ^{[1
,2
]}

Septina, Wilman ^{[1
]}

Harada, Takashi ^{[1
]}

Nose, Yoshitaro ^{[3
]}

Ikeda, Shigeru ^{[1
]}

机构：

[1] Osaka Univ, Res Ctr Solar Energy Chem, Toyonaka, Osaka 5608531, Japan

[2] Diponegoro Univ, Fac Sci & Math, Dept Chem, Semarang, Indonesia

[3] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2015年 / 7卷 / 29期

关键词：

photocathodes; copper indium disulfide; indium disulfide; heterointerface; X-ray photoelectron spectroscopy; PHOTOELECTROCHEMICAL PROPERTIES; OPTICAL-PROPERTIES; THIN-FILMS; WATER; CDS; GAP; PHOTOCATALYST; PERFORMANCE; CU2ZNSNS4;

D O I：

10.1021/acsami.5b04634

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Copper indium disulfide (CuInS2) modified with art In2S3 layer and a Pt catalyst showed a more efficient photoelectrochemical (PEC) property for hydrogen evolution from a nearly neutral (pH 6) 0.2 M NaH2PO4 solution under simulated sunlight illumination (AM 1.5G) than that of a CuInS2 electrode modified with a CdS layer and a Pt catalyst. Analysis of the PEC properties of In2S3 modified CuInS2 (In2S3/CuInS2) and CdS-modified CuInS2 (CdS/CuInS2) in solutions containing an electron scavenger (Eu3+) showed identical enhancement of the PEC properties of In2S3/CuInS2 when compared to those of CdS/CuInS2, indicating the formation of a favorable heterointerface in In2S3/CuInS2 for efficient charge separation. Spectroscopic evaluation of conduction band offsets revealed that In2S3/CuInS2 had a notch-type conduction band offset, whereas a cliff-type offset was formed in CdS/CuInS2: these results also revealed a,better interface electric structure of In2S3/CuInS2 than that of CdS/CuInS2.

引用

页码：16086 / 16092

页数：7

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