Investigation of the Electric Structures of Heterointerfaces in Pt- and In2S3-Modified CuInS2 Photocathodes Used for Sunlight-Induced Hydrogen Evolution

被引：59
作者：
Gunawan [1 ,2 ]
Septina, Wilman [1 ]
Harada, Takashi [1 ]
Nose, Yoshitaro [3 ]
Ikeda, Shigeru [1 ]
机构：
[1] Osaka Univ, Res Ctr Solar Energy Chem, Toyonaka, Osaka 5608531, Japan
[2] Diponegoro Univ, Fac Sci & Math, Dept Chem, Semarang, Indonesia
[3] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
来源：
ACS APPLIED MATERIALS & INTERFACES | 2015年 / 7卷 / 29期
关键词：
photocathodes; copper indium disulfide; indium disulfide; heterointerface; X-ray photoelectron spectroscopy; PHOTOELECTROCHEMICAL PROPERTIES; OPTICAL-PROPERTIES; THIN-FILMS; WATER; CDS; GAP; PHOTOCATALYST; PERFORMANCE; CU2ZNSNS4;
D O I：
10.1021/acsami.5b04634
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Copper indium disulfide (CuInS2) modified with art In2S3 layer and a Pt catalyst showed a more efficient photoelectrochemical (PEC) property for hydrogen evolution from a nearly neutral (pH 6) 0.2 M NaH2PO4 solution under simulated sunlight illumination (AM 1.5G) than that of a CuInS2 electrode modified with a CdS layer and a Pt catalyst. Analysis of the PEC properties of In2S3 modified CuInS2 (In2S3/CuInS2) and CdS-modified CuInS2 (CdS/CuInS2) in solutions containing an electron scavenger (Eu3+) showed identical enhancement of the PEC properties of In2S3/CuInS2 when compared to those of CdS/CuInS2, indicating the formation of a favorable heterointerface in In2S3/CuInS2 for efficient charge separation. Spectroscopic evaluation of conduction band offsets revealed that In2S3/CuInS2 had a notch-type conduction band offset, whereas a cliff-type offset was formed in CdS/CuInS2: these results also revealed a,better interface electric structure of In2S3/CuInS2 than that of CdS/CuInS2.
引用
收藏
页码：16086 / 16092
页数：7
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