Interface effects on exciton states in a CdTe/(Cd, Mn)Te quantum well

被引：0

作者：

Yokoi, H ^{[1
]}

Kakudate, Y ^{[1
]}

Semenov, YG ^{[1
]}

Takeyama, S ^{[1
]}

Tozer, SW ^{[1
]}

Kim, Y ^{[1
]}

Wojtowicz, T ^{[1
]}

Karczewski, G ^{[1
]}

Kossut, J ^{[1
]}

机构：

[1] Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 3058565, Japan

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zeeman shifts of the band-edge exciton energies for a 1.9 nm thick CdTe quantum well and a Cd1-xMnxTe (x=0.24) barrier in a single quantum well structure were obtained through photoluminescence measurements at a temperature of 4 K, magnetic fields to 60 T and hydrostatic pressures to 2.45 GPa. Taking advantage of an additional red shift observed in the Zeeman shift for the quantum well, the interface effect on the exciton energy in the quantum well was described precisely in terms of the delta -localized exchange field. It is suggested that sp-d interaction in the interface region is enhanced by a pressure.

引用

页码：417 / 418

页数：2

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