Analysis of HBM Failure in 3D NAND Flash Memory

被引：1
|
作者：
Song, Biruo [1 ,2 ,3 ]
Li, Zhiguo [3 ]
Wang, Xin [3 ]
Fu, Xiang [3 ]
Liu, Fei [1 ]
Jin, Lei [1 ,2 ,3 ]
Huo, Zongliang [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Yangtze Memory Technol Co Ltd, Wuhan 430205, Peoples R China
来源：
ELECTRONICS | 2022年 / 11卷 / 06期
关键词：
electrostatic discharge (ESD); human body model (HBM); transmission line pulse (TLP); technology computer aided design (TCAD); 3D NAND Flash memory; DESIGN;
D O I：
10.3390/electronics11060944
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Electrostatic discharge (ESD) events are the main factors impacting the reliability of NAND Flash memory. The behavior of human body model (HBM) failure and the corresponding physical mechanism of 3D NAND Flash memory are investigated in this paper. A catastrophic burn-out failure during HBM zapping is first presented. Analysis shows that NMOS fingers' local heating induced by inhomogeneous substrate resistance R su b and local heating induced by the drain contact and 3D stacked IC (SIC) structure lead to the failure. Therefore, a new approach is proposed to reduce local heat generation. Finally, by increasing N+ length (NPL) and introducing a novel contact strip, the silicon result shows enhanced ESD robustness.
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页数：14
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