Single photon emission from site-controlled pyramidal quantum dots

被引:103
|
作者
Baier, MH [1 ]
Pelucchi, E
Kapon, E
Varoutsis, S
Gallart, M
Robert-Philip, I
Abram, I
机构
[1] Swiss Fed Inst Technol, Inst Quantum Photon & Elect, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland
[2] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
关键词
D O I
10.1063/1.1643533
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate that a single photoexcited InGaAs semiconductor quantum dot (QD) grown by organo-metallic chemical vapor deposition on prepatterned substrates emits one photon at a time, with no uncontrolled background photon emission, making it an excellent single photon emitter. Moreover, our fabrication technique offers complete site control and small inhomogeneous broadening of QD arrays, which is essential for the practical implementation of QDs in efficient solid-state single photon emitting devices. (C) 2004 American Institute of Physics.
引用
收藏
页码:648 / 650
页数:3
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