Large inverse magnetoresistance in fully epitaxial Fe/Fe3O4/MgO/Co magnetic tunnel junctions

被引：39

作者：

Greullet, F. ^{[1
]}

Snoeck, E. ^{[2
]}

Tiusan, C. ^{[1
]}

Hehn, M. ^{[1
]}

Lacour, D. ^{[1
]}

Lenoble, O. ^{[1
]}

Magen, C. ^{[2
]}

Calmels, L. ^{[2
]}

机构：

[1] Univ Nancy 1, CNRS, Phys Mat Lab, F-54506 Vandoeuvre Les Nancy, France

[2] CNRS, CEMES, Grp NanoMat, F-31055 Toulouse, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 05期

关键词：

D O I：

10.1063/1.2841812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fully epitaxial Fe(001)/Fe3O4(001)/MgO(001)/Co micron-sized magnetic tunnel junctions have been elaborated on MgO(001) substrates. X-ray reflectivity and high-resolution transmission electron microscopy revealed a good quality and epitaxial growth of the stack with abrupt interfaces. The magnetotransport measurements exhibit a large negative tunneling magnetoresistance (TMR) value for magnetic tunnel junctions including an Fe3O4 layer and a MgO tunnel barrier (-8.5% at 300 K and -22% at 80 K). Moreover, the sign of the TMR changes with the applied bias. We discuss here the structural quality of the samples and the transport measurement results. (c) 2008 American Institute of Physics.

引用

页数：3

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