Solution for high-order distortion on extreme illumination condition using computational prediction method

被引：6

作者：

Kang, Young Seog ^{[1
]}

Ha, Hunhwan ^{[1
]}

Kim, Jang-Sun ^{[1
]}

Shin, Ju Hee ^{[1
]}

Kim, Young Ha ^{[1
]}

Nam, Young Sun ^{[1
]}

Choi, Young-Sin ^{[1
]}

Affentauschegg, Cedric ^{[2
]}

van der Heijden, Rob W. ^{[2
]}

Rizvi, Umar ^{[2
]}

Geh, Bernd ^{[3
]}

Janda, Eric ^{[4
]}

Baselmans, Jan ^{[2
]}

van der Sanden, Stefan ^{[2
]}

Kwon, Oh-Sung ^{[5
]}

Ponomarenko, Mariya ^{[2
]}

Slotboom, Daan ^{[2
]}

机构：

[1] SAMSUNG Elect Co Ltd, Suwon, South Korea

[2] ASML Netherlands B V, Veldhoven, Netherlands

[3] Carl Zeiss SMT Inc, Redwood City, CA USA

[4] ASML US Inc, Chandler, AZ USA

[5] ASML Korea Co Ltd, Ichon Si, Gyunggi Do, South Korea

来源：

OPTICAL MICROLITHOGRAPHY XXVIII | 2015年 / 9426卷

关键词：

lens aberrations; extreme illumination; overlay; process control; computational lithography;

D O I：

10.1117/12.2086938

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we present the limitations of 3rd order distortion corrections based on standard overlay metrology and propose a new method to quantify and correct the cold-lens aberration fingerprint. As a result of continuous shrinking features of the integrated circuit, the overlay budget requirements have become very demanding. Historically, most overlay enhancements were achieved by hardware improvements. However there also is a benefit in the computational approach, and so we looked for solutions for overlay improvements in process variation with computational applications.

引用

页数：10