Fabrication of Pb(Zr,Ti)O3 films on epitaxial γ-Al2O3(001)/Si(001) substrates

被引：19
|
作者：
Akai, D [1 ]
Sawada, K [1 ]
Ishida, M [1 ]
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Tenpaku Cho, Toyohashi, Aichi 4418580, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 259卷 / 1-2期
关键词：
sol-gel; epitaxial Al2O3; perovskite; Pb(Zr; Ti)O-3; ferroelectric materials;
D O I：
10.1016/S0022-0248(03)01587-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Pb(Zr,Ti)O-3 (PZT) films with (0 0 1) orientation were grown on epitaxial-Al2O3(0 0 1)/Si(0 0 1) substrates. The crystalline Al2O3 thin film was used as an insulating layer to fabricate metal-ferroelectric-insulator-semiconductor structures. The epitaxial-Al2O3(0 0 1) buffer layer was grown on Si(0 0 1) substrates at 1000degreesC using ultrahigh-vacuum chemical vapor deposition. The PZT films were grown on the Al2O3(0 0 1)/Si(0 0 1) substrates using a sol-gel method. Cracks on the surface of the PZT film were not observed with epitaxial-Al2O3(0 0 1) films greater than 30 nm thick. X-ray diffraction peaks associated with a perovskite structure were observed, indicating strongly (0 0 1) oriented patterns on the epitaxial-Al2O3(0 0 1)/Si(0 0 1) substrate. It was also found from results of Auger electron spectroscopy depth profiles that epitaxial-Al2O3(0 0 1) films prevent any reaction between Si and the PZT. (C) 2003 Elsevier B.V. All rights reserved.
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收藏
页码：90 / 94
页数：5
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