van der Waals Heterostructure of Phosphorene and Graphene: Tuning the Schottky Barrier and Doping by Electrostatic Gating

被引：481

作者：

Padilha, J. E. ^{[1
]}

Fazzio, A. ^{[1
]}

da Silva, Antonio J. R. ^{[1
,2
]}

机构：

[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil

[2] Lab Nacl Luz Sincrotron, BR-13083970 Campinas, SP, Brazil

来源：

PHYSICAL REVIEW LETTERS | 2015年 / 114卷 / 06期

基金：

巴西圣保罗研究基金会;

关键词：

TOTAL-ENERGY CALCULATIONS; 2-DIMENSIONAL MATERIALS; ELECTRICAL-PROPERTIES; TRANSISTORS; MOBILITY;

D O I：

10.1103/PhysRevLett.114.066803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this Letter, we study the structural and electronic properties of single-layer and bilayer phosphorene with graphene. We show that both the properties of graphene and phosphorene are preserved in the composed heterostructure. We also show that via the application of a perpendicular electric field, it is possible to tune the position of the band structure of phosphorene with respect to that of graphene. This leads to control of the Schottky barrier height and doping of phosphorene, which are important features in the design of new devices based on van der Waals heterostructures.

引用

页数：5

共 43 条

[1] ELECTRICAL-PROPERTIES OF BLACK PHOSPHORUS SINGLE-CRYSTALS [J].

AKAHAMA, Y ;

ENDO, S ;

NARITA, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1983, 52 (06) :2148-2155

[2] Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials [J].

Bernardi, Marco ;

Palummo, Maurizia ;

Grossman, Jeffrey C. .

NANO LETTERS, 2013, 13 (08) :3664-3670

[3] IMPROVED TETRAHEDRON METHOD FOR BRILLOUIN-ZONE INTEGRATIONS [J].

BLOCHL, PE ;

JEPSEN, O ;

ANDERSEN, OK .

PHYSICAL REVIEW B, 1994, 49 (23) :16223-16233

[4] Electrostatic Doping of Graphene through Ultrathin Hexagonal Boron Nitride Films [J].

Bokdam, Menno ;

Khomyakov, Petr A. ;

Brocks, Geert ;

Zhong, Zhicheng ;

Kelly, Paul J. .

NANO LETTERS, 2011, 11 (11) :4631-4635

[5] Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors [J].

Buscema, Michele ;

Groenendijk, Dirk J. ;

Blanter, Sofya I. ;

Steele, Gary A. ;

van der Zant, Herre S. J. ;

Castellanos-Gomez, Andres .

NANO LETTERS, 2014, 14 (06) :3347-3352

[6] Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene [J].

Butler, Sheneve Z. ;

Hollen, Shawna M. ;

Cao, Linyou ;

Cui, Yi ;

Gupta, Jay A. ;

Gutierrez, Humberto R. ;

Heinz, Tony F. ;

Hong, Seung Sae ;

Huang, Jiaxing ;

Ismach, Ariel F. ;

Johnston-Halperin, Ezekiel ;

Kuno, Masaru ;

Plashnitsa, Vladimir V. ;

Robinson, Richard D. ;

Ruoff, Rodney S. ;

Salahuddin, Sayeef ;

Shan, Jie ;

Shi, Li ;

Spencer, Michael G. ;

Terrones, Mauricio ;

Windl, Wolfgang ;

Goldberger, Joshua E. .

ACS NANO, 2013, 7 (04) :2898-2926

[7] TWO-DIMENSIONAL CRYSTALS Phosphorus joins the familly [J].

Churchill, Hugh. H. ;

Jarillo-Herrero, Pablo .

NATURE NANOTECHNOLOGY, 2014, 9 (05) :330-331

[8] Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode [J].

Deng, Yexin ;

Luo, Zhe ;

Conrad, Nathan J. ;

Liu, Han ;

Gong, Yongji ;

Najmaei, Sina ;

Ajayan, Pulickel M. ;

Lou, Jun ;

Xu, Xianfan ;

Ye, Peide D. .

ACS NANO, 2014, 8 (08) :8292-8299

[9] Black Phosphorus Photodetector for Multispectral, High-Resolution Imaging [J].

Engel, Michael ;

Steiner, Mathias ;

Avouris, Phaedon .

NANO LETTERS, 2014, 14 (11) :6414-6417

[10] Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction [J].

Furchi, Marco M. ;

Pospischil, Andreas ;

Libisch, Florian ;

Burgdoerfer, Joachim ;

Mueller, Thomas .

NANO LETTERS, 2014, 14 (08) :4785-4791

← 1 2 3 4 5 →