The r22 electro-optic coefficients in indium-doped congruent lithium-niobate crystals

被引：3

作者：

Abarkan, Mustapha ^{[1
,2
]}

Danielyan, Anush ^{[2
,3
,4
]}

Sewastianow, Sasha ^{[2
,3
]}

Aillerie, Michel ^{[2
,3
]}

Theofanous, Nicephore ^{[5
]}

Kostritskii, Sergey ^{[6
]}

Kokanyan, Edvard ^{[4
,7
]}

机构：

[1] Univ Sidi Mohammed Ben Abdallah Fes, LSI, Taza Gare, Morocco

[2] Univ Lorraine, LMOPS, EA 4423, F-57070 Metz, France

[3] Cent Supelec, LMOPS, F-57070 Metz, France

[4] Natl Acad Sci Armenia, Inst Phys Res, Ashtarak 2, Armenia

[5] Univ Athens, Dept Informat & Telecommun, Athens 15784, Greece

[6] RPC Optolink, Sosnovaya Al 6,Bd 5, Moscow 124489, Russia

[7] Armenian State Pedag Univ, Tigran Mets Ave 17, Yerevan, Armenia

来源：

5TH INTERNATIONAL CONFERENCE NEW ACHIEVEMENTS IN MATERIALS AND ENVIRONMENTAL SCIENCE (NAMES'16) | 2017年 / 879卷

关键词：

OPTICAL-DAMAGE RESISTANCE; PHOTOREFRACTION; PARAMETERS; FREQUENCY; GROWTH;

D O I：

10.1088/1742-6596/879/1/012005

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

The high-and low-frequency electro-optic coefficients r(222) of In-doped lithium niobate (LN) and the corresponding dielectric permittivity as well, have been experimentally determined and compared with the results obtained in undoped congruent LN crystals. Compared to pure congruent lithium niobate, a low acoustic contribution of the electro-optic and dielectric properties are originally found in indium (In)-doped congruent lithium niobate (LN:In) crystals in the low indium concentration range [0.12-1.7 mol%]. All reported results confirm that the LN:In is a very promising candidate for several non-linear devices as Pockels cells for laser Q-switching.

引用

页数：11

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